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ZXT1M322
MPPSTM Miniature Package Power Solutions 12V PNP LOW SATURATION SWITCHING TRANSISTOR
SUMMARY VCEO= -12V; RSAT = 60m ; IC= -4A DESCRIPTION
Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline, this new 4th generation low saturation transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Additionally users will also gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels PCB area and device placement savings Lower package height (nom 0.9mm) 2mm x 2mm MLP (single die)
C
FEATURES
* Low Equivalent On Resistance * Extremely Low Saturation Voltage (-140mV@ -1A) * hFE specified up to -10A * IC= -4A Continuous Collector Current * 2mm x 2mm MLP
B
E
APPLICATIONS
* DC - DC Converters (FET Driving) * Charging Circuits * Power switches * Motor control
PINOUT
ORDERING INFORMATION
DEVICE ZXT1M322TA ZXT1M322TC REEL 7 13 TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 10000 2mm x 2mm Single MLP underside view
DEVICE MARKING
S1 ISSUE 2 - JUNE 2002 1
ZXT1M322
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current (a) Base Current Power Dissipation at TA=25C (a) Linear Derating Factor Power Dissipation at TA=25C (b) Linear Derating Factor Power Dissipation at TA=25C (d) Linear Derating Factor Power Dissipation at TA=25C (e) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB PD LIMIT -20 -12 -7.5 -12 -4 -1000 1.5 12 2.45 19.6 1 8 3 24 -55 to +150 UNIT V V V A A mA W mW/C W mW/C W mW/C W mW/C C
PD
PD
PD
T j :T stg
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a) Junction to Ambient (b) Junction to Ambient (d) Junction to Ambient (e)
NOTES (a) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with all exposed pads attached. (b) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions measured at t 5 secs with all exposed pads attached. (c) Repetitive rating - pulse width limited by max junction temperature. refer to Transient Thermal Impedance graph. (d) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with minimal lead connections only. (e) For a single device surface mounted on 65sq cm2oz copper on FR4 PCB in still air conditions with all exposed pads attached. (f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in the package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight is Rth=300C/W giving a power rating of Ptot=420mW.
SYMBOL R JA R JA R JA R JA
VALUE 83 51 125 42
UNIT C/W C/W C/W C/W
ISSUE 2 - JUNE 2002 2
ZXT1M322
CHARACTERISTICS
3.5
IC Collector Current (A)
VCE(SAT) Limited
Max Power Dissipation (W)
10
3.0 2.5 2oz Cu 2.0 1.5 1.0 1oz Cu
Note: a Note: e
Tamb=25C
1
DC 1s 100ms
0.1
10ms 1ms 100us Single Pulse, Tamb=25C
0.5 0.0 0 25 50 75 100 125 150
0.01 0.1
1
10
VCE Collector-Emitter Voltage (V)
Temperature (C)
Safe Operating Area
Thermal Resistance (C/W) Thermal Resistance (C/W)
80 60
D=0.5
Derating Curve
225 200 175 150 125 100 75 50 25 0 0.1
40 20
D=0.2 Single Pulse D=0.05 D=0.1
1oz copper
2oz copper
0 100 1m
10m 100m
1
10
100
1k
1
10
100
Pulse Width (s)
Board Cu Area (sqcm)
Transient Thermal Impedance
3.5 3.0
Tamb=25C Tj max=150C Continuous 2oz copper
Thermal Resistance v Board Area
PD Dissipation (W)
2.5 2.0 1.5 1.0 0.5 0.0 0.1
1oz copper
1
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
ISSUE 2 - JUNE 2002 3
ZXT1M322
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) -10 -100 -100 -195 -240 Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio V BE(sat) V BE(on) h FE 300 300 180 60 45 100 -0.97 -0.87 475 450 275 100 70 110 21 70 130 30 MHz pF ns ns MIN. -20 -12 -7.5 TYP. -35 -25 -8.5 -25 -25 -25 -17 -140 -150 -300 -300 -1.05 -0.95 MAX. UNIT V V V nA nA nA mV mV mV mV mV V V CONDITIONS. I C =-100 A I C =-10mA* I E =-100 A V CB =-16V V EB =-6V V CES =-10V I C =-0.1A, I B =-10mA* I C =-1A, I B =-10mA* I C =-1.5A, I B =-50mA* I C =-3A, I B =-50mA* I C =-4A, I B =-150mA* I C =-4A, I B =-150mA* I C =-4A, V CE =-2V* I C =-10mA, V CE =-2V* I C =-0.1A, V CE =-2V* I C =-2.5A, V CE =-2V* I C =-8A, V CE =-2V* I C =-10A, V CE =-2V* I C =-50mA, V CE =-10V f=100MHz V CB =-10V, f=1MHz V CC =-6V, I C =-2A I B1 =I B2 =-50mA
Transition Frequency Output Capacitance Turn-On Time Turn-Off Time
fT C obo t (on) t (off)
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
ISSUE 2 - JUNE 2002 4
ZXT1M322
CHARACTERISTICS
0.25
Tamb=25C IC/IB=50
100m
0.20
VCE(SAT) (V)
VCE(SAT) (V)
IC/IB=100
0.15 0.10 0.05
100C 25C -55C
10m
IC/IB=50 IC/IB=10
1m 1m
IC Collector Current (A)
10m
100m
1
10
0.00 1m
VCE(SAT) v IC
IC Collector Current (A)
10m
100m
1
10
VCE(SAT) v IC
1.4
Normalised Gain
VBE(SAT) (V)
1.0 0.8 0.6 0.4 0.2 0.0 1m 10m 100m 1 10
-55C 25C
450 360 270 180 90 0
Typical Gain (hFE)
1.2
100C
VCE=2V
630 540
1.0 0.8
IC/IB=50
-55C
0.6 0.4 1m
25C 100C
IC Collector Current (A)
hFE v IC
IC Collector Current (A)
10m
100m
1
10
VBE(SAT) v IC
1.0 0.8
VCE=2V
VBE(ON) (V)
-55C
0.6
25C
0.4 0.2 1m
100C
IC Collector Current (A)
10m
100m
1
10
VBE(ON) v IC
ISSUE 2 - JUNE 2002 5
ZXT1M322
MLP322 PACKAGE OUTLINE (2mm x 2mm Micro Leaded Package)
CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES
PACKAGE DIMENSIONS
MILLIMETRES DIM A A1 A2 A3 b b1 D D2 D4 MIN. 0.80 0.00 0.65 0.15 0.18 0.17 MAX. 1.00 0.05 0.75 0.25 0.28 0.30 INCHES MIN. 0.0315 0.00 0.0255 0.0059 0.0070 0.0066 MAX. 0.0393 0.002 0.0295 0.0098 0.0110 0.0118 DIM e E E2 E4 L L2 r 0 MILLIMETRES MIN. MAX. INCHES MIN. MAX.
0.65 REF 2.00 BSC 0.79 0.48 0.20 0.99 0.68 0.45
0.0255 REF 0.0787 BSC 0.031 0.0188 0.0078 0.039 0.0267 0.0177
0.125 MAX. 0.075 BSC 12
0.005 REF 0.0029 BSC 0 12
2.00 BSC 1.22 0.56 1.42 0.76
0.0787 BSC 0.0480 0.0220 0.0559 0.0299
(c) Zetex plc 2002
Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 uksales@zetex.com Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to
www.zetex.com ISSUE 2 - JUNE 2002 6

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